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Molecular Dynamics Analysis of SiC Single Crystal Materials

Authors :
Li Wei
Source :
MATEC Web of Conferences, Vol 227, p 01002 (2018)
Publication Year :
2018
Publisher :
EDP Sciences, 2018.

Abstract

SiC is modeled as a new generation of semiconductor materials because of its excellent properties. The 6H-SiC is modeled by Materials Studio. The band and state density of 6H-SiC are analyzed. In addition, 6H-SiC Substrate, the AL element doping, from the microscopic mechanism, analyzed the 6H-SiC semiconductor conductivity.

Subjects

Subjects :
Engineering (General). Civil engineering (General)
TA1-2040

Details

Language :
English, French
ISSN :
2261236X
Volume :
227
Database :
Directory of Open Access Journals
Journal :
MATEC Web of Conferences
Publication Type :
Academic Journal
Accession number :
edsdoj.0110e0a2c29249e5b56b8e0e87844caf
Document Type :
article
Full Text :
https://doi.org/10.1051/matecconf/201822701002
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