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A C-Band Cryogenic GaAs MMIC Low-Noise Amplifier for Quantum Applications

Authors :
Guo, Zechen
Sun, Daxiong
Huang, Peisheng
Sun, Xuandong
Yuan, Yuefeng
Zhang, Jiawei
Huang, Wenhui
Liang, Yongqi
Qiu, Jiawei
Zhang, Jiajian
Chu, Ji
Guo, Weijie
Jiang, Ji
Niu, Jingjing
Ren, Wenhui
Tao, Ziyu
Linpeng, Xiayu
Zhong, Youpeng
Yu, Dapeng
Publication Year :
2024

Abstract

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.

Subjects

Subjects :
Quantum Physics

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2412.19477
Document Type :
Working Paper