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Artificial moir\'{e} engineering for an ideal BHZ model
- Publication Year :
- 2024
-
Abstract
- We demonstrate that (001) grown Cd3As2 thin films with a superlattice-patterned gate can potentially realize the moir\'e Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the parameterization region necessary to achieve topological flat mini-bands with a C4z symmetric and a C6z symmetric potential. Additionally, we show that a spin-polarized state can serve as the minimal platform for hosting the moir\'e induced quantum anomalous Hall effect, supported by Hartree Fock interaction kernel analysis and self-consistent mean field calculations.<br />Comment: 10 pages, 10 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2409.08540
- Document Type :
- Working Paper