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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Authors :
Bergeron, E. Annelise
Sfigakis, F.
Elbaroudy, A.
Jordan, A. W. M.
Thompson, F.
Nichols, George
Shi, Y.
Tam, Man Chun
Wasilewski, Z. R.
Baugh, J.
Publication Year :
2024

Abstract

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $\nu=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$\r{A} are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $\mu$V and critical current densities up to 9.6 $\mu$A/$\mu$m, among the largest values reported for Nb-InAs SNS devices.<br />Comment: main text 8 pages with 3 figures; supplementary material 17 pages with 11 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2405.14138
Document Type :
Working Paper