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Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron
- Publication Year :
- 2024
-
Abstract
- We theoretically study an artificial neuron circuit containing a quantum memristor in the presence of relaxation and dephasing. The charge transport in the quantum element is realized via tunneling of a charge through a quantum particle which shuttles between two terminals -- a functionality reminiscent of classical diffusive memristors. We demonstrate that this physical principle enables hysteretic behavior of the current-voltage characteristics of the quantum device. In addition, being used in artificial neural circuit, the quantum switcher is able to generate self-sustained current oscillations. Our analysis reveals that these self-oscillations are triggered only in quantum regime with a moderate rate of relaxation, and cannot exist either in a purely coherent regime or at a very high decoherence. We investigate the hysteresis and instability leading to the onset of current self-oscillations and analyze their properties depending on the circuit parameters. Our results provide a generic approach to the use of quantum regimes for controlling hysteresis and generating self-oscillations.<br />Comment: 14 pages, 7 figures, 6 appendices
- Subjects :
- Quantum Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2405.00624
- Document Type :
- Working Paper