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NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications
- Publication Year :
- 2024
-
Abstract
- We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2404.05528
- Document Type :
- Working Paper