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Electronic band structure of Sb2Te3
- Source :
- Phys. Rev. B 109, 165205 (2024)
- Publication Year :
- 2023
-
Abstract
- Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the \Gamma point, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method.<br />Comment: 11 pages, 8 figures, to be published in Phys. Rev. B
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. B 109, 165205 (2024)
- Publication Type :
- Report
- Accession number :
- edsarx.2312.07402
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.109.165205