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Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor
- Publication Year :
- 2023
-
Abstract
- Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operated in the ballistic regime, as postulated in the original sFET proposal, and hence need high SOC channel materials in practice. Here, we demonstrate gate-controlled precession of spins in a non-ballistic sFET using an array of narrow diffusive wires as a channel between a spin source and a spin drain. Our study shows that spins traveling in a semiconducting channel can be coherently rotated on a distance far exceeding the electrons mean free path, and spin-transistor functionality can be thus achieved in non-ballistic channels with relatively low SOC, relaxing two major constraints of the original sFET proposal.<br />Comment: Main text: 21 pages, 4 figures. Supplementary Information:11 pages, 4 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2303.01843
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1021/acs.nanolett.3c00369