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Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics
- Source :
- Advanced Photonics Research, 2023
- Publication Year :
- 2023
-
Abstract
- Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS$_2$ interface limits the application of optoelectronic devices based on conventional metals because of the high contact resistance of the Schottky contacts. On the other hand, a semimetal-TMD-semimetal device can overcome this limitation, where the MIGS are sufficiently suppressed and can result in ohmic contacts. Here we demonstrate the optoelectronic performance of a bismuth-monolayer (1L) MoS$_2$-bismuth device with ohmic electrical contacts and extraordinary optoelectronic properties. To address the wafer-scale production, we grew full coverage 1L MoS$_2$ by using chemical vapor deposition method. We measured high photoresponsivity of 300 A/W in the UV regime at 77 K, which translates into an external quantum efficiency (EQE) ~ 1000 or $10^5$%. We found that the 90% rise time of our devices at 77 K is 0.1 ms, which suggests that the current devices can operate at the speed of ~ 10 kHz. The combination of large-array device fabrication, high sensitivity, and high-speed response offers great potential for applications in photonics that includes integrated optoelectronic circuits.<br />Comment: Accepted to Advanced Photonics Research
Details
- Database :
- arXiv
- Journal :
- Advanced Photonics Research, 2023
- Publication Type :
- Report
- Accession number :
- edsarx.2301.12635
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1002/adpr.202300029