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Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$

Authors :
Hart, James L
Bhatt, Lopa
Zhu, Yanbing
Han, Myung-Geun
Bianco, Elisabeth
Li, Shunran
Hynek, David J
Schneeloch, John A
Tao, Yu
Louca, Despina
Guo, Peijun
Zhu, Yimei
Jornada, Felipe
Reed, Evan J
Kourkoutis, Lena F
Cha, Judy J
Publication Year :
2022

Abstract

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe$_2$, which is isostructural and isoelectronic to MoTe$_2$, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe$_2$ devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials.<br />Comment: 6 figures, 2 tables

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2210.16390
Document Type :
Working Paper