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Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride
- Source :
- Nature Communications 14, 3299 (2023)
- Publication Year :
- 2022
-
Abstract
- Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($\mathrm{V}_{\mathrm{B}}^-$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the $\mathrm{V}_{\mathrm{B}}^-$ ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of $\mathrm{V}_{\mathrm{B}}^-$. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of $\mathrm{V}_{\mathrm{B}}^-$ to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of $\mathrm{V}_{\mathrm{B}}^-$, which are important for future use of defects in hBN as quantum sensors and simulators.<br />Comment: 8+8+4 pages, 4+5+1 figures
- Subjects :
- Quantum Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Nature Communications 14, 3299 (2023)
- Publication Type :
- Report
- Accession number :
- edsarx.2210.11485
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41467-023-39115-y