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Single Event Tolerance of X-ray SOI Pixel Sensors

Authors :
Hagino, Kouichi
Hayashida, Mitsuki
Kohmura, Takayoshi
Doi, Toshiki
Tsunomachi, Shun
Kitajima, Masatoshi
Tsuru, Takeshi G.
Uchida, Hiroyuki
Kayama, Kazuho
Mori, Koji
Takeda, Ayaki
Nishioka, Yusuke
Yukumoto, Masataka
Mieda, Kira
Yonemura, Syuto
Ishida, Tatsunori
Tanaka, Takaaki
Arai, Yasuo
Kurachi, Ikuo
Kitamura, Hisashi
Kawahito, Shoji
Yasutomi, Keita
Publication Year :
2022

Abstract

We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.<br />Comment: 9 pages, 5 figures, accepted for publication in JATIS

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2210.05049
Document Type :
Working Paper
Full Text :
https://doi.org/10.1117/1.JATIS.8.4.046001