Berry curvature induced anomalous Hall conductivity in magnetic topological oxide double perovskite Sr2FeMoO6

Oxide materials exhibit several novel structural, magnetic, and electronic properties. Their stability under ambient conditions, easy synthesis, and high transition temperatures provide such systems with an ideal ground for realizing topological properties and real-life technological applications. However, experimental evidence of topological states in oxide materials is rare. In this study, we have synthesized single crystals of oxide double perovskite Sr2FeMoO6 and revealed its topological nature by investigating its structural, magnetic, and electronic properties. We observed that the system crystallized in the cubic space group Fm-3m, which is a half-metallic ferromagnet. Transport measurements show an anomalous Hall effect, and it is evident that the Hall contribution originates from the Berry curvature. Assuming a shift of the Fermi energy towards the conduction band, the contribution of the anomalous Hall effect is enhanced owing to the presence of a gaped nodal line. This study can be used to explore and realize the topological properties of bulk oxide systems.
Comment: Topological quantum material, Oxide topological material