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Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime
- Publication Year :
- 2022
-
Abstract
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan<br />Comment: 26 pages, 5 figures, 1 table
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2208.01798
- Document Type :
- Working Paper