Back to Search Start Over

Thermal insulation and heat guiding using nanopatterned MoS2

Authors :
Xiao, Peng
Sachat, Alexandros El
Angel, Emigdio Chávez
Nikoulis, Giorgos
Kioseoglou, Joseph
Termentzidis, Konstantinos
Torres, Clivia M. Sotomayor
Sledzinska, Marianna
Publication Year :
2022

Abstract

In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away from the electronic components. In this work we propose structures based on free-standing, few-layer, nanopatterned MoS2 that insulate and guide heat in the in-plane direction. We arrive at these designs via a thorough study of the in-plane thermal conductivity as a function of thickness, porosity, and temperature in both pristine and nanopatterned MoS2 membranes. Two-laser Raman thermometry was employed to measure the thermal conductivities of a set of free-standing MoS2 flakes with diameters greater than 20 um and thicknesses from 5 to 40 nm, resulting in values from 30 to 85 W/mK, respectively. After nanopatterning a square lattice of 100-nm diameter holes with a focused ion beam we have obtained a greater than 10-fold reduction of the thermal conductivities for the period of 500 nm and values below 1 W/mK for the period of 300 nm. The results were supported by equilibrium molecular dynamic simulations for both pristine and nanopatterned MoS2. The selective patterning of certain areas results in extremely large difference in thermal conductivities within the same material. Exploitation of this effect enabled for the first time thermal insulation and heat guiding in the few-layer MoS2. The patterned regions act as high thermal resistors: we obtained a thermal resistance of 4x10-6 m2K/W with only four patterned lattice periods of 300 nm, highlighting the significant potential of MoS2 for thermal management applications.

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2204.04999
Document Type :
Working Paper