Back to Search Start Over

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Authors :
Perla, Pujitha
Faustmann, Anton
Koelling, Sebastian
Zellekens, Patrick
Deacon, Russell
Fonseka, H. Aruni
Kölzer, Jonas
Sato, Yuki
Sanchez, Ana M.
Moutanabbir, Oussama
Ishibashi, Koji
Grützmacher, Detlev
Lepsa, Mihail Ion
Schäpers, Thomas
Publication Year :
2021

Abstract

Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration.<br />Comment: 9 pages, 9 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2110.09352
Document Type :
Working Paper