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Assessment of the (010) $\beta$-Ga$_2$O$_3$ Surface and Substrate Specification
- Source :
- J. Vac. Sci. Technol. A 39, 013408 (2021)
- Publication Year :
- 2021
-
Abstract
- Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $\beta$-Ga$_2$O$_3$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $\beta$-Ga$_2$O$_3$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.<br />Comment: 12 pages, 8 figures
- Subjects :
- Condensed Matter - Materials Science
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- J. Vac. Sci. Technol. A 39, 013408 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2105.03741
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1116/6.0000725