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Semiconductor-based selective emitter with sharp cutoff for thermophotovoltaic energy conversion
- Publication Year :
- 2021
-
Abstract
- Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and backside metal coating is studied here for thermophotovoltaic (TPV) energy conversion. Optical simulation predicts the spectral emittance above 0.9 in the wavelengths from 1 to 1.85 um and below 0.2 in the sub-bandgap range with sharp cutoff around the bandgap, indicating superior spectral selectivity behavior. This is confirmed by excellent agreement with indirectly measured spectral emittance of the fabricated Ge-based selective emitter sample. Furthermore, the TPV efficiency by paring the Ge-based selective emitter with a GaSb cell is theoretically analyzed at different temperatures. This work will facilitate the development of the semiconductor-based selective emitters for enhancing TPV performance.
- Subjects :
- Physics - Optics
Condensed Matter - Materials Science
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2104.11885
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1364/OL.428215