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Stress-controlled zero-field spin splitting in silicon carbide
- Source :
- Appl. Phys. Lett. 118, 084003 (2021)
- Publication Year :
- 2020
-
Abstract
- We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.<br />Comment: 13 pages, 3 figures
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 118, 084003 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2012.07588
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/5.0040936