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Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
- Source :
- Phys. Rev. B 103, 035308 (2021)
- Publication Year :
- 2020
-
Abstract
- For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, the valleys in monolayer MoSi2As4 are multiple-folded, implying a new valley dimension. Such multiple-folded valleys can be described by a three-band low-power Hamiltonian. This study presents the theoretical advance and the potential applications of monolayer MoSi2N4 and MoSi2As4 in valleytronic devices, especially multiple information processing.
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. B 103, 035308 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2010.10764
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.103.035308