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Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
- Source :
- Proceedings of SPIE - The International Society for Optical Engineering 8096 (2011)
- Publication Year :
- 2020
-
Abstract
- Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Proceedings of SPIE - The International Society for Optical Engineering 8096 (2011)
- Publication Type :
- Report
- Accession number :
- edsarx.2009.02141
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1117/12.894010