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Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
- Source :
- Advanced Materials 20(1):115 - 118 (2008)
- Publication Year :
- 2020
-
Abstract
- A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Advanced Materials 20(1):115 - 118 (2008)
- Publication Type :
- Report
- Accession number :
- edsarx.2009.01768
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1002/adma.20070710