Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices

Authors :: Mastro, M. A.
Hite, J. K.
Eddy, Jr., C. R.
Tadjer, M. J.
Pearton, S. J.
Ren, F.
Kim, J.
Source :: International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
Publication Year :: 2020
Abstract: Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

Database :: arXiv
Journal :: International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
Publication Type :: Report
Accession number :: edsarx.2009.01117
Document Type :: Working Paper
Full Text :: https://doi.org/10.1142/S012915641940007X

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