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Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices
- Source :
- International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
- Publication Year :
- 2020
-
Abstract
- Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
- Publication Type :
- Report
- Accession number :
- edsarx.2009.01117
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1142/S012915641940007X