On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

MLA

Ferreyra, C., et al. On the Key Role of Oxygen Vacancies Electromigration in the Memristive Response of Ferroelectric Devices. 2020. EBSCOhost, https://doi.org/10.1103/PhysRevApplied.14.044045.

APA

Ferreyra, C., Rengifo, M., Sánchez, M. J., Everhard, A. S., Noheda, B., & Rubi, D. (2020). On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices. https://doi.org/10.1103/PhysRevApplied.14.044045

Chicago

Ferreyra, C., M. Rengifo, M. J. Sánchez, A. S. Everhard, B. Noheda, and D. Rubi. 2020. “On the Key Role of Oxygen Vacancies Electromigration in the Memristive Response of Ferroelectric Devices.” doi:10.1103/PhysRevApplied.14.044045.