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Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide
- Source :
- Nano Lett. 2020, 20, 5, 3435-3441
- Publication Year :
- 2020
-
Abstract
- Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.<br />Comment: 19 pages, 3 figures - published in Nano Letters
- Subjects :
- Physics - Applied Physics
Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Nano Lett. 2020, 20, 5, 3435-3441
- Publication Type :
- Report
- Accession number :
- edsarx.2005.02005
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1021/acs.nanolett.0c00340