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A Molecular Approach for Engineering Interfacial Interactions in Magnetic-Topological Insulator Heterostructures

Authors :
Cuxart, Marc G.
Valbuena, Miguel Angel
Robles, Roberto
Moreno, César
Bonell, Frédéric
Sauthier, Guillaume
Imaz, Inhar
Xu, Heng
Nistor, Corneliu
Barla, Alessandro
Gargiani, Pierluigi
Valvidares, Manuel
Maspoch, Daniel
Gambardella, Pietro
Valenzuela, Sergio O.
Mugarza, Aitor
Source :
ACS Nano 14, 6285 (2020)
Publication Year :
2020

Abstract

Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here we show that these properties can be preserved by using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi$_2$Te$_3$ thin films, robust interfaces are formed that preserve undoped topological surface states as well as the pristine magnetic moment of the divalent Co ions. The selected ligands allow us to tune the interfacial hybridization within this weak interaction regime. These results, which are in stark contrast with the observed suppression of the surface state at the first quintuple layer of Bi$_2$Se$_3$ induced by the interaction with Co phthalocyanines, demonstrate the capability of planar metal-organic molecules to span interactions from the strong to the weak limit.

Details

Database :
arXiv
Journal :
ACS Nano 14, 6285 (2020)
Publication Type :
Report
Accession number :
edsarx.2004.14219
Document Type :
Working Paper
Full Text :
https://doi.org/10.1021/acsnano.0c02498