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SOI technology for quantum information processing

Authors :
De Franceschi, S.
Hutin, L.
Maurand, R.
Bourdet, L.
Bohuslavskyi, H.
Corna, A.
Kotekar-Patil, D.
Barraud, S.
Jehl, X.
Niquet, Y. -M.
Sanquer, M.
Vinet, M.
Source :
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4
Publication Year :
2019

Abstract

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.<br />Comment: 4 pages, 13 figures, Invited contribution at IEDM 2016

Details

Database :
arXiv
Journal :
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4
Publication Type :
Report
Accession number :
edsarx.1912.08313
Document Type :
Working Paper
Full Text :
https://doi.org/10.1109/IEDM.2016.7838409