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Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Authors :
Kang, Lixing
Ye, Chen
Zhao, Xiaoxu
Zhou, Xieyu
Hu, Junxiong
Li, Qiao
Ouyang, Qingling
Yang, Jiefu
Hu, Dianyi
Chen, Jieqiong
Cao, Xun
Zhang, Yong
Xu, Manzhang
Di, Jun
Tian, Dan
Song, Pin
Kutty, Govindan
Zeng, Qingsheng
Fu, Qundong
Deng, Ya
Zhou, Jiadong
Pennycook, Stephen J.
Ariando, Ariando
Miao, Feng
Hong, Guo
Huang, Yizhong
Yong, Ken-Tye
Ji, Wei
Wang, Xiao Renshaw
Liu, Zheng
Source :
Nat Commun 11, 3729 (2020)
Publication Year :
2019

Abstract

Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.<br />Comment: 15 pages, 5 figures

Details

Database :
arXiv
Journal :
Nat Commun 11, 3729 (2020)
Publication Type :
Report
Accession number :
edsarx.1912.06364
Document Type :
Working Paper
Full Text :
https://doi.org/10.1038/s41467-020-17253-x