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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
- Source :
- Beilstein J. Nanotechnol. 10, 1177 (2019)
- Publication Year :
- 2019
-
Abstract
- We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by the modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.
- Subjects :
- Physics - Applied Physics
Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Beilstein J. Nanotechnol. 10, 1177 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1908.08863
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.3762/bjnano.10.117