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Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model
- Publication Year :
- 2019
-
Abstract
- We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$-valley and $\Gamma$-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$$\cdot$$p$ model and relevant input parameters successfully applied to relaxed and strained Ge$_{1-x}$Sn$_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.<br />Comment: 8-pages, 6 figures
- Subjects :
- Physics - Applied Physics
Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1908.02958
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1088/1367-2630/ab306f