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Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce$_3$Bi$_4$Pt$_3$
- Source :
- Phys. Rev. B 100, 235133 (2019)
- Publication Year :
- 2019
-
Abstract
- We report the results of high pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of Kondo insulator Ce$_3$Bi$_4$Pt$_3$ up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.<br />Comment: 8 pages, 5 figures
- Subjects :
- Condensed Matter - Strongly Correlated Electrons
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. B 100, 235133 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1907.09017
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.100.235133