Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

MLA

Vettori, Marco, et al. Impact of the Ga Flux Incidence Angle on the Growth Kinetics of Self-Assisted GaAs Nanowires on Si(111). 2019. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1907.03226&authtype=sso&custid=ns315887.

APA

Vettori, M., Danescu, A., Guan, X., Regreny, P., Penuelas, J., & Gendry, M. (2019). Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111).

Chicago

Vettori, Marco, Alexandre Danescu, Xin Guan, Philippe Regreny, José Penuelas, and Michel Gendry. 2019. “Impact of the Ga Flux Incidence Angle on the Growth Kinetics of Self-Assisted GaAs Nanowires on Si(111).” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1907.03226&authtype=sso&custid=ns315887.