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Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
- Source :
- Nature Nanotechnology (2019)
- Publication Year :
- 2019
-
Abstract
- Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 {\mu}m wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.<br />Comment: To appear on Nature Nanotechnology; 41 pages, 4 figures, 15 supplementary figures
Details
- Database :
- arXiv
- Journal :
- Nature Nanotechnology (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1901.10392
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41565-018-0348-z