Back to Search Start Over

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Authors :
Gao, Anyuan
Lai, Jiawei
Wang, Yaojia
Zhu, Zhen
Qin, Shuchao
Zeng, Junwen
Yu, Geliang
Wang, Naizhou
Chen, Wenchao
Cao, Tianjun
Hu, Weida
Sun, Dong
Chen, Xianhui
Miao, Feng
Shi, Yi
Wang, Xiaomu
Source :
Nature Nanotechnology (2019)
Publication Year :
2019

Abstract

Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 {\mu}m wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.<br />Comment: To appear on Nature Nanotechnology; 41 pages, 4 figures, 15 supplementary figures

Details

Database :
arXiv
Journal :
Nature Nanotechnology (2019)
Publication Type :
Report
Accession number :
edsarx.1901.10392
Document Type :
Working Paper
Full Text :
https://doi.org/10.1038/s41565-018-0348-z