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Strain Engineering of the Intrinsic Spin Hall Conductivity in a SrTiO$_3$ Quantum Well
- Source :
- Phys. Rev. Materials 3, 014401 (2019)
- Publication Year :
- 2018
-
Abstract
- The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO$_3$, such as occurs at an LaAlO$_3$/SrTiO$_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered through strain and gate voltage by tuning the chemical potential. Strain direction is also a significant factor in the spin Hall response as this direction affects the alignment of the conduction bands.<br />Comment: 9 pages, 6 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Materials 3, 014401 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1804.00061
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevMaterials.3.014401