Electric field Control of Exchange Bias by Resistive Switching

Authors :: Wei, L. J.
Hu, Z. Z.
Wang, Y. J.
Du, G. X.
Yuan, Y.
Wang, J.
Tu, H. Q.
You, B.
Zhou, S. M.
Hu, Y.
Du, J.
Publication Year :: 2017
Abstract: We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory devices.<br />Comment: 20 pages 5 figures