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Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3

Authors :
Lin, G. T.
Zhuang, H. L.
Luo, X.
Liu, B. J.
Chen, F. C.
Yan, J.
Sun, Y.
Zhou, J.
Lu, W. J.
Tong, P.
Sheng, Z. G.
Qu, Z.
Song, W. H.
Zhu, X. B.
Sun, Y. P.
Publication Year :
2017

Abstract

CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, {\gamma}, and {\delta} of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.<br />Comment: Accepted by Phys. Rev. B

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1706.03239
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.95.245212