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Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
- Publication Year :
- 2017
-
Abstract
- CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, {\gamma}, and {\delta} of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.<br />Comment: Accepted by Phys. Rev. B
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1706.03239
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.95.245212