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On the impact ionization rate in direct gap semiconductors
- Publication Year :
- 2017
-
Abstract
- We present quantum-mechanical theory of impact ionization in semiconductors with the direct band gap in \$\Gamma\$-point. It is shown that energy dependence of the impact ionization rate \$\mathcal{W}(E)\$ near a threshold \$E_{th}\$ is given by superposition of the two terms, one of which is strongly anisotropic and quadratic in \$E-E_{th}\$, while another one is isotropic and cubic in \$E-E_{th}\$. Explicit form of the coefficients in such representation is derived in the framework of the 14-band \${\bf k\cdot p}\$ model, and we claim the room temperature domination of the cubic contribution for most of the direct-gap materials with \$E_g\$ up to 1.5 eV.<br />Comment: 9 pages (in Russian), 3 figures, JETP Letters vol. 105, iss. 9 (2017)
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Language :
- Russian
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1704.02200
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1134/S0021364017090065