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High quality atomically thin PtSe2 films grown by molecular beam epitaxy
- Source :
- 2D Mater. 4, 045015 (2017)
- Publication Year :
- 2017
-
Abstract
- Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe2.
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- 2D Mater. 4, 045015 (2017)
- Publication Type :
- Report
- Accession number :
- edsarx.1703.04279
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1088/2053-1583/aa8919