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Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction
- Publication Year :
- 2017
-
Abstract
- The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction. The reason for the same is attributed to the role of larger electronegativity of Ni as compared to Mg at 10 K and ionization of impurity states at 100 K. The above behavior is confirmed by performing the Hall measurements.<br />Comment: Charge transport across NiZnO/MgZnO heterojunction at 10K and 100K is studied. Junction exhibits p-n type at 10K and n-n behavior at 100K. The behavior is confirmed by performing the Hall measurements
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1703.03927
- Document Type :
- Working Paper