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Disorder effects in correlated topological insulators

Authors :
Hung, Hsiang-Hsuan
Barr, Aaron
Prodan, Emil
Fiete, Gregory A.
Source :
Phys. Rev. B 94, 235132 (2016)
Publication Year :
2016

Abstract

Using exact diagonalization and quantum Monte Carlo calculations we investigate the effects of disorder on the phase diagram of both non-interacting and interacting models of two-dimensional topological insulators. In the fermion sign problem-free interacting models we study, electron-electron interactions are described by an on-site repulsive Hubbard interaction and disorder is included via the one-body hopping operators. In both the non-interacting and interacting models we make use of recent advances in highly accurate real-space numerical evaluation of topological invariants to compute phase boundaries, and in the non-interacting models determine critical exponents of the transitions. We find different models exhibit distinct stability conditions of the topological phase with respect to interactions and disorder. We provide a general analytical theory that accurately predicts these trends.<br />Comment: 13 pages, 5 figures

Details

Database :
arXiv
Journal :
Phys. Rev. B 94, 235132 (2016)
Publication Type :
Report
Accession number :
edsarx.1608.06634
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.94.235132