Near room-temperature memory devices based on hybrid spin-crossover SiO2 nanoparticles coupled to single-layer graphene nanoelectrodes

MLA

Holovchenko, Anastasia, et al. Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes. 2016. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1602.04681&authtype=sso&custid=ns315887.

APA

Holovchenko, A., Dugay, J., Giménez-Marqués, M., Coronado, E., & van der Zant, H. S. J. (2016). Near room-temperature memory devices based on hybrid spin-crossover SiO2 nanoparticles coupled to single-layer graphene nanoelectrodes.

Chicago

Holovchenko, Anastasia, Julien Dugay, Mónica Giménez-Marqués, Eugenio Coronado, and Herre S. J. van der Zant. 2016. “Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1602.04681&authtype=sso&custid=ns315887.