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Electronic topological transitions in Cd at high pressures

Authors :
Srinivasan, Varadharajan
Godwal, B. K.
Grossman, Jeffrey C.
Jeanloz, Raymond
Publication Year :
2015

Abstract

Pressure-induced changes in the Fermi surface of Cd up to 40 GPa are studied using highly accurate density-functional theory calculations. The topology of Fermi surface changes at pressures of 2, 8, 12 , 18 and 28 GPa indicating electronic topological transitions (ETTs). Structural parameters, compressibility data and elastic constant reveal anomalies across these ETTs. The computed equation of state at 300 K is in excellent agreement with the experimental data. In view of the highly controversial nature of these ETTs the present studies are aimed at motivating the experimentalists for their direct detection at high pressures.<br />Comment: 5 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1511.01989
Document Type :
Working Paper