Back to Search
Start Over
Charge-insensitive single-atom spin-orbit qubit in silicon
- Source :
- Phys. Rev. Lett. 116, 246801 (2016)
- Publication Year :
- 2015
-
Abstract
- High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.<br />Comment: 4 pages, 2 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Lett. 116, 246801 (2016)
- Publication Type :
- Report
- Accession number :
- edsarx.1508.04259
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevLett.116.246801