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Charge-insensitive single-atom spin-orbit qubit in silicon

Authors :
Salfi, J.
Mol, J. A.
Culcer, Dimitrie
Rogge, S.
Source :
Phys. Rev. Lett. 116, 246801 (2016)
Publication Year :
2015

Abstract

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.<br />Comment: 4 pages, 2 figures

Details

Database :
arXiv
Journal :
Phys. Rev. Lett. 116, 246801 (2016)
Publication Type :
Report
Accession number :
edsarx.1508.04259
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevLett.116.246801