High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

MLA

Wang, Yang, et al. High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-Gate Electrodes. 2014. EBSCOhost, https://doi.org/10.1063/1.4904715.

APA

Wang, Y., Chen, X., Ye, W., Wu, Z., Han, Y., Han, T., He, Y., Cai, Y., & Wang, N. (2014). High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes. https://doi.org/10.1063/1.4904715

Chicago

Wang, Yang, Xiaolong Chen, Weiguang Ye, Zefei Wu, Yu Han, Tianyi Han, Yuheng He, Yuan Cai, and Ning Wang. 2014. “High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-Gate Electrodes.” doi:10.1063/1.4904715.