Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)

MLA

O’Brien, William A., et al. Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-XAs (001). 2014. EBSCOhost, https://doi.org/10.1007/s11664-014-3583-6.

APA

O’Brien, W. A., Qi, M., Yan, L., Stephenson, C. A., Protasenko, V., Xing, H. G., Millunchick, J. M., & Wistey, M. A. (2014). Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001). https://doi.org/10.1007/s11664-014-3583-6

Chicago

O’Brien, William A., Meng Qi, Lifan Yan, Chad A. Stephenson, Vladimir Protasenko, Huili Grace Xing, Joanna M. Millunchick, and Mark A. Wistey. 2014. “Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-XAs (001).” doi:10.1007/s11664-014-3583-6.