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Efficient, high-density, carbon-based spinterfaces

Authors :
Djeghloul, F.
Garreau, G.
Gruber, M.
Joly, L.
Boukari, S.
Arabski, J.
Bulou, H.
Scheurer, F.
Bertran, F.
Fèvre, P. Le
Taleb-Ibrahimi, A.
Wulfhekel, W.
Beaurepaire, E.
Hajjar-Garreau, S.
Wetzel, P.
Bowen, M.
Weber, W.
Publication Year :
2014

Abstract

The research field of spintronics has sought, over the past 25 years and through several materials science tracks, a source of highly spin-polarized current at room temperature. Organic spinterfaces, which consist in an interface between a ferromagnetic metal and a molecule, represent the most promising track as demonstrated for a handful of interface candidates. How general is this effect? We deploy topographical and spectroscopic techniques to show that a strongly spin-polarized interface arises already between ferromagnetic cobalt and mere carbon atoms. Scanning tunneling microscopy and spectroscopy show how a dense semiconducting carbon film with a low band gap of about 0.4 eV is formed atop the metallic interface. Spin-resolved photoemission spectroscopy reveals a high degree of spin polarization at room temperature of carbon-induced interface states at the Fermi energy. From both our previous study of cobalt/phthalocyanine spinterfaces and present x-ray photoemission spectroscopy studies of the cobalt/carbon interface, we infer that these highly spin-polarized interface states arise mainly from sp2-bonded carbon atoms. We thus demonstrate the molecule-agnostic, generic nature of the spinterface formation.

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1410.6901
Document Type :
Working Paper