Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Authors :: Klug, Jeffrey A.
Becker, Nicholas G.
Groll, Nickolas R.
Cao, Chaoyue
Weimer, Matthew S.
Pellin, Michael J.
Zasadzinski, John F.
Proslier, Thomas
Source :: Applied Physics Letters 103, 211602 (2013)
Publication Year :: 2013
Abstract: Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.<br />Comment: 3 figures, 1 table, ~4 pages