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Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties
- Source :
- J. Appl. Phys. 114, 093908 (2013)
- Publication Year :
- 2013
-
Abstract
- We present the studies of electrical transport and magnetic interactions in Zn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance (MR) with maximum values of about -50% is related to the weak localization phenomena. The magnetic properties of Zn1-xMnxGeAs2 samples show that the random Mn-distribution in the cation sites of the host lattice occurs only for the sample with the lowest Mn-content, x=0.003. The samples with higher Mn-content show a high level of magnetic frustration. Nonzero Curie-Weiss temperature observed in all our samples indicates that weak ferromagnetic (for x=0.003) or antiferromagnetic (for x>0.005) interactions with |{\Theta}|<3 K are present in this system. The RKKY model, used to estimate the Mn-hole exchange integral Jpd for the diluted Zn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd =(0.75+/-0.09) eV.<br />Comment: 10 pages, 7 figures
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- J. Appl. Phys. 114, 093908 (2013)
- Publication Type :
- Report
- Accession number :
- edsarx.1306.3413
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.4820475