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Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties

Authors :
Kilanski, L.
Szałowski, K.
Szymczak, R.
Górska, M.
Dynowska, E.
Aleshkevych, P.
Podgórni, A.
Avdonin, A.
Dobrowolski, W.
Fedorchenko, I. V.
Marenkin, S. F.
Source :
J. Appl. Phys. 114, 093908 (2013)
Publication Year :
2013

Abstract

We present the studies of electrical transport and magnetic interactions in Zn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance (MR) with maximum values of about -50% is related to the weak localization phenomena. The magnetic properties of Zn1-xMnxGeAs2 samples show that the random Mn-distribution in the cation sites of the host lattice occurs only for the sample with the lowest Mn-content, x=0.003. The samples with higher Mn-content show a high level of magnetic frustration. Nonzero Curie-Weiss temperature observed in all our samples indicates that weak ferromagnetic (for x=0.003) or antiferromagnetic (for x>0.005) interactions with |{\Theta}|<3 K are present in this system. The RKKY model, used to estimate the Mn-hole exchange integral Jpd for the diluted Zn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd =(0.75+/-0.09) eV.<br />Comment: 10 pages, 7 figures

Details

Database :
arXiv
Journal :
J. Appl. Phys. 114, 093908 (2013)
Publication Type :
Report
Accession number :
edsarx.1306.3413
Document Type :
Working Paper
Full Text :
https://doi.org/10.1063/1.4820475