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Doping Mechanisms in Graphene-MoS2 Hybrids
- Source :
- Appl. Phys. Lett. 103, 251607 (2013)
- Publication Year :
- 2013
-
Abstract
- We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.<br />Comment: 11 pages, 7 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 103, 251607 (2013)
- Publication Type :
- Report
- Accession number :
- edsarx.1304.2236
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.4852615