Back to Search
Start Over
High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
- Source :
- Physical Review B 87, 121301 (2013)
- Publication Year :
- 2013
-
Abstract
- We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.<br />Comment: 10 pages, 4 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Physical Review B 87, 121301 (2013)
- Publication Type :
- Report
- Accession number :
- edsarx.1303.2544
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.87.121301